A Novel Multilayer Avalanche Photodetector for Low Noise Applications

F. Capasso; W. T. Tsang; A. L. Hutchinson; G. F. Williams

doi:10.1364/IGWO.1982.ThC2

Topical Meeting on Integrated and Guided-Wave Optics
Technical Digest Series (Optica Publishing Group, 1982),
paper ThC2
•https://doi.org/10.1364/IGWO.1982.ThC2

A Novel Multilayer Avalanche Photodetector for Low Noise Applications

F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams

Integrated and Guided Wave Optics 1982

Pacific Grove, California United States
6–8 January 1982
ISBN:

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F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, "A Novel Multilayer Avalanche Photodetector for Low Noise Applications," in Topical Meeting on Integrated and Guided-Wave Optics, Technical Digest Series (Optica Publishing Group, 1982), paper ThC2.

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Abstract

A large ionization rates (α,β) difference is an essential requirement for a low noise avalanche photodiode (APD). Unfortunately most III-V semiconductors have α≃β.

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