Abstract

Semiconductor quantum wells can be selectively interdiffused by using a variety of methods and exhibit blue-shifted (n = 1) optical transitions relative to the as-grown square wells. This makes bandgap engineering possible in the lateral dimension across an epitaxial wafer. Common interdiffusion techniques involve the introduction of impurities into the crystal. However, an impurity-free interdiffusion technique is advantageous for bandgap tuning applications for active devices since the presence of impurities could be detrimental to the operation of the device. Here we use an impurity-free interdiffusion technique to fabricate lasers that operate at significantly different wavelengths (Δλ ≈ 120 Å) on the same substrate.

© 1991 Optical Society of America