Abstract

The fabrication of photonic integrated circuits requires the integration and optical coupling of waveguiding devices with different bandgaps. Recently, there has been much interest in obtaining this integration in a single growth step. One of the possibilities is to use quantum-well devices and locally change the thickness (or bandgap) by patterning the substrate.¹ This paper describes the use of shadow-masked growth to obtain lateral bandgap engineering.²

© 1991 Optical Society of America