Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > IQEC > 1992 > ThE > ThE2
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper ThE2

Fabrication and Optical Characteristics of GaInAs/InP Quantum-Wires Using Selective Growth on Grooved Side Walls of Ultra-Fine Multi-Layers

K. Komori, A. Hamano, S. Arai, Y. Miyamoto, and Y. Suematsu

Not Accessible

Your library or personal account may give you access

Abstract

Low dimensional quantum-well structures are very attractive for future photonic systems consisting of high performance devices.[1,2] In order to realize them, it is very important to develop a fabrication method of very fine structure with high density and low fluctuation in its size.

© 1992 IQEC

PDF Article
More Like This
GaInAs/InP Long-Wavelength Quantum-Wires and Boxes: Fabrication Technology and Lasers

Shigehisa Arai
QFA.4 Quantum Optoelectronics (QOE) 1993

Magnetophotoluminescence from GaAs quantum wires fabricated by MOCYD selective growth

S. Tsukamoto, Y. Nagamune, M. Nishioka, Y. Arakawa, S. Sasaki, and N. Miura
CWH1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Radiative Exciton Lifetime in GaAs Quantum Wires Fabricated by MOCVD Selective Growth

A. Ishikawa, Y. Arakawa, S. Tsukamoto, Y. Nagamune, and M. Nishioka
ThD4 International Quantum Electronics Conference (IQEC) 1992

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use