Abstract

We have measured both the near field mode profile dynamics and the TE and TM gain recovery of several different 1.5 μ multiple quantum well (QW) semiconductor amplifiers. The subpicosecond dynamics of the near field of the semiconductor QW laser amplifier indicate that not only are there significant pump induced self focusing effects on the near field of the probe beam, but also that the dynamics of the near field are different on opposite sides of the diode junction. In addition, the initial fast recovery (<1 ps) due to the thermalization of the carriers is found to be faster for the TM polarized probe by almost a factor of two compared to the TE polarization.

© 1992 IQEC