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Study of electrical characteristics of sensors based on indium tin oxynitride annealed in nitrogen atmosphere

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Abstract

The objective of this study is the characterization of optoelectronic sensors based on thin films of ITON (Indium Tin Oxynitride) annealed at high temperatures (600, 700, 800, 900 and 1000°C) in a conventional furnace with a nitrogen atmosphere.

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