Abstract

A case study of the ion-assisted etching of silicon by chlorine is presented as a prototype of a class of ion-assisted etching processes. In contrast to the more well studied Si-F system, and other F atom etching reactions, Cl etching processes are much more dependent on energetic ion impact of the surface. We will examine aspects of chlorine adsorption to silicon, sputtering of adsorbed chlorine atoms, incorporation fo chlorine into the silicon crystal lattice, and formation and removal of SiCl_x etch products. In-situ SIMS, ISS, and modulated beam mass spectrometric measurements, and post etch RBS and XPS analysis of the altered surface are used to examine the dynamics of the etching process and the state of the altered surface layer produced by ion bombardment.

© 1985 Optical Society of America