The Influence of Ion Bombardment on Etching Reactions

Harold F. Winters; J. W. Coburn

doi:10.1364/MSBA.1985.MA2

Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates
Technical Digest Series (Optica Publishing Group, 1985),
paper MA2
•https://doi.org/10.1364/MSBA.1985.MA2

The Influence of Ion Bombardment on Etching Reactions

Harold F. Winters and J. W. Coburn

Microphysics of Surfaces, Beams, and Adsorbates 1985

Santa Fe, New Mexico United States
4–6 February 1985
ISBN:

From the session
Session I (MA)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
H. F. Winters and J. W. Coburn, "The Influence of Ion Bombardment on Etching Reactions," in Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates, Technical Digest Series (Optica Publishing Group, 1985), paper MA2.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Etching involves the interaction of gaseous species (e.g., XeF₂) with a solid surface (e.g., silicon) to produce volatile products (eg., SiF₄(gas)). (For recent review papers on this subject see refs. 1-7.) Moreover this type of reaction is frequently enhanced by bombardment with ions,^8,9 electrons,⁸ and photons.^10-12

PDF Article

More Like This

Ion Enhanced Processes in Etching of Silicon

T. M. Mayer, M. S. Ameen, E. L. Barish, D. J. Vitkavage, and T. Mizutani
MA1 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

A Study into the Mechanism of ION-Assisted Etching

F.H.M. Sanders
MA3 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

Energy Distributions of Electronically Excited Molecules Produced by Ion Bombardment Of Silicon

R. Walkup, Ph. Avouris, IBM Thomas, and J. Watson
MB1 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985

Previous Article Next Article