Laser–induced Selective Deposition of Micron-size Structures on Silicon by Surface Reduction of Tungsten Hexafluoride

Y.S. Liu; C.P. Yakymyshyn; H.R. Philipp; H.C. Cole; L.M. Levinson

doi:10.1364/MSBA.1985.TuC4

Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates
Technical Digest Series (Optica Publishing Group, 1985),
paper TuC4
•https://doi.org/10.1364/MSBA.1985.TuC4

Laser–induced Selective Deposition of Micron-size Structures on Silicon by Surface Reduction of Tungsten Hexafluoride

Y.S. Liu, C.P. Yakymyshyn, H.R. Philipp, H.C. Cole, and L.M. Levinson

Microphysics of Surfaces, Beams, and Adsorbates 1985

Santa Fe, New Mexico United States
4–6 February 1985
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Session VI (TuC)

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Y. S. Liu, C. P. Yakymyshyn, H. R. Philipp, H. C. Cole, and L. M. Levinson, "Laser–induced Selective Deposition of Micron-size Structures on Silicon by Surface Reduction of Tungsten Hexafluoride," in Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates, Technical Digest Series (Optica Publishing Group, 1985), paper TuC4.

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Abstract

Selective deposition of refractory metal and metal sicilide on silicon induced by a focussed Argon laser beam is reported. Micron-size lines with extremely good surface smoothness were observed at a writing speed of 7 cm/sec. Deposition mechanism and properties of fine structures are discussed.

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