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A Generalized Model for the Analysis of Surface Residence Effects During Ion-Assisted Etching

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Abstract

A detailed understanding of the mechanisms of ion-assisted etching is important for both pure and applied scientific interpretations. For pure science the study of ion-assisted etching offers new information on radiation-induced surface reactions. For applied science the study of ion-assisted etching offers information important to understanding of the dry processing of semiconductors and metals.

© 1989 Optical Society of America

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