Abstract
We have previously demonstrated waveguide-detector devices made by grafting a thin GaAs film directly onto the surface of glass-channel waveguides.1 Coupling efficiency of light from the waveguide to the detector has been, in general, low because of the presence of an inherent ~10 nm thick, low-index layer at the semiconductor/waveguide bonding interface.2
© 1990 Optical Society of America
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