Abstract

Vertical cavity surface emitting lasers show great potential for a variety of applications, ranging from optical interconnects to optical neural networks. As these lasers are integrated into devices and systems, issues such as threshold current and operating voltage become paramount considerations. There has been substantial effort in the device community to devise processes and structures which produce the lowest possible threshold currents in vertical cavity surface emitting lasers. One way to reduce threshold currents is to reduce the active layer volume, which can be accomplished by simply reducing the crossection of the laser device.

© 1990 Optical Society of America