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Monolithically integrated butt-coupled InGaAs metal–semiconductor–metal waveguide photodetector by selective area regrowth

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Abstract

Photoreceivers integrated with a Final stage of guided-wave optical processing are envisaged for both coherent and multichannel WDM detection systems.1,2 Successful implementation requires photodetectors that are efficiently coupled to the waveguides. This may be achieved by forming the guide adjacent to the detector and butt-coupled light directly into the side of the absorption region.3,4 In this paper we report the fabrication of a fast, efficient butt-coupled interdigitated InGaAs metal–semiconductor-metal (MSM) Schottky barrier waveguide detector mono­lithically integrated with an InP/InGaAsP/InP waveguide.

© 1990 Optical Society of America

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