Abstract

Single-mode GaAs/AlGaAs ridge waveguide phase modulator with a five-layer heterostructure has been fabricated using a metal-organic chemical vapor deposition (MOCVD) technique and the chemical wet etching method. The phase shift was measured with a Fabry-Perot interferometer at 1.31 µm wavelength. The phase shift efficiency of 34.6° /V· mm was achieved for five-layer waveguide PPpinNN phase modulator with a W-shaped index profile. This efficiency is larger than previously reported values for P-i-N phase modulators.

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