GaPN-Type Metastable Alloy Semiconductors: Growth, Properties and Implications to Optoelectronics Applications

Kentaro Onabe

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18C3.2

GaPN-Type Metastable Alloy Semiconductors: Growth, Properties and Implications to Optoelectronics Applications

Kentaro Onabe

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
ISBN:

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New Crystal Growth (18C3)

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K. Onabe, "GaPN-Type Metastable Alloy Semiconductors: Growth, Properties and Implications to Optoelectronics Applications," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18C3.2.

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Abstract

The GaP₁₋_xN_x alloy semiconductor has been grown with the N concentration as high as 6%. This alloy semiconductor is a highly luminescent material up to a few percents of the N concentration. The unique nature of the band-edge formation is clarified.

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