GaInNAs Laser Diode Pulsed Operation at 77 K

M. Kondow; K. Nakahara; K. Nakahara; T. Kitatani; T. Kitatani; Y. Yazawa; Y. Yazawa; K. Uomi; K. Uomi

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18D3.2

GaInNAs Laser Diode Pulsed Operation at 77 K

M. Kondow, K. Nakahara, T. Kitatani, Y. Yazawa, and K. Uomi

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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M. Kondow, K. Nakahara, T. Kitatani, Y. Yazawa, and K. Uomi, "GaInNAs Laser Diode Pulsed Operation at 77 K," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18D3.2.

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Abstract

GaInNAs laser, which is expected to greatly improve the high-temperature performance of long-wavelength laser diodes, was fabricated for the first time. Threshold current density under pulsed operation at 77 K was 1.0 kA/cm².

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