Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OECC > 1996 > 18D3 > 18D3.3
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 18D3.3

Arsenic-Free Thermal Surface Cleaning for Molecular-Beam-Epitaxy and its Application to Fabrication of InGaAs/InGaP DFB Laser

Masashi Usami, Yoshiyuki Takahira, and Yuichi Matsushima

Not Accessible

Your library or personal account may give you access

Abstract

A novel arsenic-free thermal cleaning method combined with gas-source molecular- beam-epitaxy (GS-MBE) is proposed for reducing dislocations and organic impurities accumulated at GaAs regrown interface. By using this method, 0.98 µm InGaAs/InGaP DFB laser was successfully fabricated for the first time by GS-MBE.

© 1996 IEICE

PDF Article
More Like This
High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy

J. H. Quigley, H. Y. Lee, M. D. Crook, M. J. Hafich, G. Y. Robinson, Du Li, and N. Otsuka
TuE9 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy

D. Vakhshoori, M. Hong, L. H. Grober, J. P. Mannaerts, S. N. G. Chu, J. D. Wynn, and R. S. Freund
CWB4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Picosecond optical response of low growth temperature InGaAs/InAIAs multiple quantum wells

SE Ralph, M Hargis, PW Juodawlkis, C Verber, P Chin, and J Woodall
WI3 International Quantum Electronics Conference (IQEC) 1996

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use