Low Threshold Current 1.3µm GalnAsP SL-MQW Ridge Waveguide Lasers on GaAs Substrate Using Wafer Fusion

N. Iwai; N. Yamanaka; N. Yokouchi; A. Kasukawa

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18D4.5

Low Threshold Current 1.3µm GalnAsP SL-MQW Ridge Waveguide Lasers on GaAs Substrate Using Wafer Fusion

N. Iwai, N. Yamanaka, N. Yokouchi, and A. Kasukawa

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
ISBN:

From the session
Devices for Access Network 2 (18D4)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
N. Iwai, N. Yamanaka, N. Yokouchi, and A. Kasukawa, "Low Threshold Current 1.3µm GalnAsP SL-MQW Ridge Waveguide Lasers on GaAs Substrate Using Wafer Fusion," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18D4.5.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

A very low threshold current of 5.7mA was achieved in 1.3µm GaInAsP strained-layer quantum well ridge waveguide lasers on a GaAs substrate using wafer fusion.

PDF Article

More Like This

Low-Threshold 1.3-µm GaInAsP/InP Multi-Quantum Well Surface-Emitting Lasers

S. Uchiyama and T. Ninomiya
19D1.3 Optoelectronics and Communications Conference (OECC) 1996

High quantum efficiency and low threshold current of 1.55µm strained InGaAsP/InGaAlAs MQW laser with InAlAs electron stopper

H. Murai, Y. Matsui, Y. Ogawa, and T. Kunii
18D4.3 Optoelectronics and Communications Conference (OECC) 1996

Low threshold and low power consumption 1.3pm strained-layer quantum well lasers

A. Kasukawa and N. Yokouchi
18D4.1 Optoelectronics and Communications Conference (OECC) 1996

Previous Article Next Article