Improved GaInAsP/InP Deep Grating DBR for Monolithic Short Cavity Lasers

M. Hamasaki; P. Kaewplung; T. Baba; A. Matsutani; F. Koyama; K. Iga

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18P.31

Improved GaInAsP/InP Deep Grating DBR for Monolithic Short Cavity Lasers

M. Hamasaki, P. Kaewplung, T. Baba, A. Matsutani, F. Koyama, and K. Iga

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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Poster Session (18P)

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M. Hamasaki, P. Kaewplung, T. Baba, A. Matsutani, F. Koyama, and K. Iga, "Improved GaInAsP/InP Deep Grating DBR for Monolithic Short Cavity Lasers," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18P.31.

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Abstract

This paper describes a GalnAsP /InP deep grating DBR for short cavity lasers. The reflectivity of the DBR fabricated mono-lithically by EB lithography and RIBE technique was evaluated to be 60%. By further reducing the roughness of etched sidewalls, pA-threshold lasing in 1.55 µm lasers will be obtained with cavity shorter than 20 µm.

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