Abstract
To increase the fundamental-mode power from high-power semiconductor lasers, a tapered region at the end of the narrow untapered stripe has been designed, which has resulted in a clear advantage maintaining a single-mode power which is of crucial importance in pumping erbium-doped fiber amplifiers.
© 1996 IEICE
PDF ArticleMore Like This
K.A. Williams, I.H. White, R.V. Penty, D.J. Robbins, and J.J. Lewandowski
CThG4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998
Ziping Jiang, I.H. White, F. Laughton, R.V. Penty, M.W. McCall, and H.K. Tsang
TuE.5 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995
I. Middlemast, J. Sarma, and P.S. Spencer
IWF3 Integrated Photonics Research (IPR) 1996