Improved Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Ping-Li Wu; Yan-Min Liao; Chi-En Chen; Yu-Jie Teng; Yu-Ying Hung; Jin-Wei Shi; Yi-Shan Lee

doi:10.1364/SENSORS.2021.STu1B.4

OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES)
OSA Technical Digest (Optica Publishing Group, 2021),
paper STu1B.4
•https://doi.org/10.1364/SENSORS.2021.STu1B.4

Improved Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Ping-Li Wu, Yan-Min Liao, Chi-En Chen, Yu-Jie Teng, Yu-Ying Hung, Jin-Wei Shi, and Yi-Shan Lee

Optical Sensors 2021

Washington, DC United States
19–23 July 2021
ISBN: 978-1-943580-90-3

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Laser I (STu1B)

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P. Wu, Y. Liao, C. Chen, Y. Teng, Y. Hung, J. Shi, and Y. Lee, "Improved Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers," in OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES), S. Buckley, F. Vanier, S. Shi, K. Walker, I. Coddington, S. Paine, K. Lok Chan, W. Moses, S. Qian, P. Pellegrino, F. Vollmer, G. , J. Jágerská, R. Menzies, L. Emmenegger, and J. Westberg, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper STu1B.4.

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Abstract

The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 104 ⁄2 for single photon detection efficiency of 31% at RT.

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