Add to BibSonomyAbstract
Strained-layer epitaxy involves more than the dislocation-free growth of dissimilar materials: effective strained-layer epitaxy exploits lattice-mismatch-induced strain to fine-tune material properties. This paper describes strained-layer epitaxy and describes its application to electronic and optoelectronic device to improve performance.
© 1991 Optical Society of America
PDF ArticleMore Like This
Compound semiconductor strained-layer superlattices
L. R. Dawson
FM2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986
Band mixing effects in strained layer semiconductor lasers
D. J. Robbins, A. C. G. Wood, and K. A. Abram
CWF16 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991
Monolayer-thick GaAs-GaSbAs strained layer quantum-well lasers
J. H. Lee, T. Zhang, and R. M. Kolbas
CWP6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991