Abstract

Recent advances in material growth and fabrication process have made possible the realization of a new class of ultra-fast High Electron Mobility Transistors (HEMTs) in the AlInAs/GalnAs material system (lattice-matched to InP). In the last three (3) years alone, through improvements in materials and shrinking of gate length, the speed of state-of-the-art AlInAs/GalnAs HEMTs has been increased at an astounding rate: from 80 GHz in 1987 to 250 GHz as of today [1-4].

© 1991 Optical Society of America