Abstract

There is an ongoing need for efficient nonlinear materials at wavelengths in the near infrared for applications such as optical data processing and spatial light modulation. Compound semiconductors such as GaAs and InP are particularly promising for these applications. While the photorefractive properties of GaAs have been studied in some detail [1-3], there is less data on InP [1]. The purpose of the work described here was to determine the photorefractive properties of Fe-doped InP in both the steady state and transient regime, and relate them to properties measured by conventional electronic techniques.

© 1987 Optical Society of America