Abstract
GaInSb/InAs superlattices hold a number of significant potential advantages relative to GalnAsSb (or InAsSb) alloys as quantum-well materials for 2-5-μm laser diodes. The heavy- and light-hole bands in the superlattices can be separated from each other by more than an energy gap, greatly reducing Auger recombination cross sections. Energy gaps out to 5 μm and well beyond are easily obtained.1
© 1995 Optical Society of America
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