Abstract

We have used time-resolved Raman spectroscopy to study the energy relaxation of non-equilbrium carriers in semiconductors such as GaAs. Since the initial transfer of energy from the carriers to the lattice occurs within a few picoseconds, these experiments require a temporal resolution of less than a picosecond. We discuss in this paper the constraints on such experiments, their rationale, and the results obtained using a micro-channel plate photomultiplier.

© 1986 Optical Society of America