Stable fundamental mode operation in semiconductor injection lasers to high power levels can be accomplished by introducing structures with lateral index guiding.

Unknown Author

doi:10.1364/SLA.1987.WB7

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper WB7
•https://doi.org/10.1364/SLA.1987.WB7

Stable fundamental mode operation in semiconductor injection lasers to high power levels can be accomplished by introducing structures with lateral index guiding.

Unknown Author

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
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AlGaAs Lasers (WB)

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U. Author, "Stable fundamental mode operation in semiconductor injection lasers to high power levels can be accomplished by introducing structures with lateral index guiding.," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper WB7.

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Abstract

Stable fundamental mode operation in semiconductor injection lasers to high power levels can be accomplished by introducing structures with lateral index guiding. These structures, usually, consist of two-step growths with a blocking layer and their processing steps are complicated, In this paper, we report on a real index-guided stripe laser structure which can be achieved by a one-step selective area growth technique in the metalorganic chemical vapor deposition (MOCVD) system.

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