Abstract

As the level of microelectronics integration increases, device design geometries decrease. For example, current state of the art fabrication lines for high performance devices (e.g. microprocessors and DRAMs) use design geometries with critical dimensions (CDs) of 0.8 μm and smaller. Further, SEMATECH's goal for 1993 is to have CDs of 0.35 μm in production capability; goals of 0.15 μm are being discussed for the late-1990s. This trend greatly reduces processing latitude in device fabrication and thus places even greater demands on materials properties and process control. For these goals to be met, there must be more diagnostics capabilities than presently exist. Optimal characteristics for diagnostics include being noncontact, nondestructive, simple, quantitative, rapid, and capable of being implemented in-situ.

© 1992 Optical Society of America