Abstract

The future manufacture of IC's beyond 2000 will require pattern transfer systems of considerable complexity and cost. Critical dimensions below 150 nm must be controlled in three dimensions without interference from proximity effects and with an overlay/alignment capability that approaches 50 nm (3 sigma) from layer to layer over larger field sizes of 25 to 30 mm on a side. The metrology to develop and control these systems also needs to be developed with precision approaching atomic dimensions. The implications of these requirements on continuing the scaling treadmill approach for ULSI development are discussed.

© 1993 Optical Society of America