Abstract

High-mobility poly-Si TFTs fabricated in low temperature process are required for the next generation of active-matrix liquid-crystal displays (AMLCDs). The mobility of poly-Si TFT exceeds that of the conventional a-Si TFT active device by two orders of magnitude, permitting integration of peripheral devices circuits and increased aperture. With optimized excimer laser annealing process condition, we have successfully fabricated low temperature poly-Si TFT on glass and plastic substrates.

© 2001 IEEE