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Conferences > CLEO_Europe > 1994 > CThM > CThM3

Ultrafast carrier relaxation in low-temperature grown InxGa1-xAs layers

A. Krotkus, S. Marcinkevičius, K. Grigoras, V. Pašiškevičius, and J. A. Tellefsen

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Abstract

We present here investigations of the photoexcited carrier dynamics in InxGa1-x As epitaxial layers grown by a metal-organic chemical-vapor-deposition technique (MOCVD) at low substrate temperatures (400-430°C, instead of the usual 600°C). It has been reported before1 that under such growth conditions, highly resistive layers with picosecond carrier life times can be obtained. Moreover, this technique can be used for growing alloys of a wide composition range including materials sensitive to infrared radiation.

© 1994 IEEE

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