Dilute nitride GaInNAs/GaAs quantum well (QW) lasers have been subject to intensive study since being first proposed by Kondow et al. . Dilute nitride GaInNAs materials have a wide range of applications such as long wavelength infrared laser diodes, high efficient multi)junction solar cells, broad band semiconductor optical amplifiers (SOA) and tuneable lasers. The GaInNAs/GaAs material system has a large band)gap bowing which results in a large conduction band offset  and this system has the potential to cover a range of optical communication wavelengths by controlling the N composition. Also, the reduced temperature sensitivity and observed broad)band gain have made GaInNAs a promising candidate for un)cooled and tuneable communication lasers at 1.3 /μm.
© 2013 IEEEPDF Article
More Like This
ATh3A.15 Asia Communications and Photonics Conference (ACPC) 2014
L. J. Mawst, Jeng-Ya Yeh, and Nelson Tansu
CMF5 Conference on Lasers and Electro-Optics (CLEO) 2005
Nelson Tansu and Luke J. Mawst
CTuQ4 Conference on Lasers and Electro-Optics (CLEO) 2002