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Fast and Sensitive THz Detection by an Asymmetric-Dual-Grating-Gate Epitaxial-Graphene-Channel FET Due to Plasmonic and Photothermoelectric Rectification Effects

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Abstract

We experimentally investigate an epitaxial-graphene-channel FET THz detector demonstrated a 10-ps-order fast response time and a high responsivity of 0.3 mA/W at room temperature. We also identify coexisting of both plasmonic and photothermoelectric rectification effects.

© 2023 The Author(s)

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