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Epsilon-Near-Zero Modulators Integrated on Si3N4 Waveguides for Operation Shorter than 1µm

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Abstract

We report on the demonstration of epsilon-near-zero (ENZ) modulators operating at 980nm by integrating indium oxide thin films on silicon nitride waveguides. This work enables ENZ modulators to operate in the near-infrared and visible bands.

© 2023 The Author(s)

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