Abstract

Obliquely deposited thin films of the a-Ge_xSe_1-x system have gained widespread interest as high resolution photoresists [1]. This paper reports the results of our photoluminescence (PL) studies of a-GeSe₂ thin films deposited simultaneously at 0, 10, 30, 50 and 70° angles of incidence. Examination of the PL characteristics were carried out to throw light on changes in the electronic structure and the distribution of the radiative recombination centres induced by the columnar structure of these films and their gradual disappearance upon prolonged illumination.

© 1984 Optical Society of America