Photoluminescence in Amorphous Alloys: a-SiOx:H, a-SiNx:H, a-SixC1-x:H

R. Carius; K. Jahn; W. Siebert; W. Fuhs

doi:10.1364/ICOL.1984.WD36

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper WD36
•https://doi.org/10.1364/ICOL.1984.WD36

Photoluminescence in Amorphous Alloys: a-SiO_x:H, a-SiN_x:H, a-Si_xC_1-x:H

R. Carius, K. Jahn, W. Siebert, and W. Fuhs

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
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R. Carius, K. Jahn, W. Siebert, and W. Fuhs, "Photoluminescence in Amorphous Alloys: a-SiOx:H, a-SiNx:H, a-SixC1-x:H," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper WD36.

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Abstract

We report on the photoluminescence (PL) in the amorphous alloys: a-SiO_x:H, a-SiN_x:H, a-Si_xC_1-x:H over a wide range of x. The films were prepared by glow discharge decomposition of suitable mixtures of SiH₄ with N₂O, NH₃, and CH₄ (C₂H₄), respectively.

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