Photonic devices grown by atmospheric-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine

M. G. Young; B. I. Miller; M. Oron; U. Koren; D. W. Kisker

doi:10.1364/IPR.1990.MI2

Integrated Photonics Research
Technical Digest Series (Optica Publishing Group, 1990),
paper MI2
•https://doi.org/10.1364/IPR.1990.MI2

Photonic devices grown by atmospheric-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine

M. G. Young, B. I. Miller, M. Oron, U. Koren, and D. W. Kisker

Integrated Photonics Research 1990

Hilton Head, South Carolina United States
26–28 March 1990
ISBN:

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Optical Waveguide Geometrics and Techniques (MI)

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M. G. Young, B. I. Miller, M. Oron, U. Koren, and D. W. Kisker, "Photonic devices grown by atmospheric-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine," in Integrated Photonics Research, Technical Digest Series (Optica Publishing Group, 1990), paper MI2.

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Abstract

Because of the increasing interest in long-wavelength devices operating in the 1.1–1.55-μm wavelength region, growth techniques such as organometallic vapor-phase epitaxy (OMVPE) and chemical-beam epitaxy (CBE) are required to use toxic hydrides such as AsH₃ and PH₃ as the source of group V precursors. Of the two hydrides, AsH₃ is more toxic, having a daily 8-h exposure limit of only 50 parts per billion, which requires the installation of elaborate safety systems prior to any growth. As a result, there have been many attempts to replace arsine with metal-organic substitutes.

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