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Conferences > MSNP > 1995 > MThC > MThC2

Atomic Layer Controlled Deposition Of Al2O3 Films Employing Trimethylaluminum (TMA) And H2O Vapor

A. W. Ott, A.C. Dillon, H.K. Eaton, S.M. George, and J.D. Way

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Abstract

The development of atomic layer controlled deposition processes has been a focus of recent research(1). The controlled growth of Al2O3 thin films has several important technological applications. For example, Al2O3 deposition on silicon surfaces is useful for the low temperature formation of high dielectric insulators.

© 1995 Optical Society of America

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