Abstract

In order to be compatible with the silicon industry it is desirable to put optical transceivers directly on processed silicon chips, so that the optical signals terminate directly on-chip. These transceivers require a detector and transmitter which could be either an emitter or a modulator. One promising route for the construction of such hybrid chips is to flip-chip bond III-V devices as detectors and modulators[1-4] to CMOS. This poster will present measurements of the performance of electro-absorption modulators we have designed, grown and fabricated which are intended to be flip-chipped bonded to CMOS. In addition, we will also describe our work on the optimization of these structures[5] and compare the low voltage performance of bulk GaAs modulators with MQW GaAlAs/GaAs modulators [7].

© 1997 Optical Society of America