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Conferences > OECC > 1996 > 16D1 > 16D1.3
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 16D1.3

A Study on AlAs Oxide Confinement Structure for Long Wavelength Surface Emitting Lasers

N. Ohnoki, T. Mukaihara, N. Hatori, A. Mizutani, F. Koyama, and K. Iga

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Abstract

We propose an oxidized confinement structure for AlGalnAs/InP surface emitting lasers. A 200 Å thick AlAs grown on an InP substrate was selectively oxidized, which shows a good isolation characteristics.

© 1996 IEICE

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