Abstract

Magnesium fluoride (MgF₂) thin films deposited using atomic layer deposition (ALD) were studied for use as optical coatings. The deposition was performed in a commercially available Picosun R-200 Advanced ALD reactor. Characterization of these films was performed using spectroscopic ellipsometry (SE), X-ray Photoelectron Spectroscopy (XPS), Rutherford Backscattering Spectrometry (RBS), Scanning electron microscopes (SEM) and spectrophotometer for thin films deposited on silicon substrates and quartz lens. ALD deposited films showed high R+T at wavelength down to 350 nm, low oxygen and carbon concentration in the films.

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