Abstract

Planar Buried-Heterostructure (PBH) lasers offer many advantages such as low threshold and ease of integration and have been used extensively in the 1.3–1.65 μm range for optical communications^1,2. In most of this work the laser structure was grown by LPE including both the basic DH structure and the regrown p-n blocking layer. More recently many investigators have used various hybrid LPE-vapor phase techniques^3-7 to grow these structures in order to increase planarity or yield. The desire to achieve these goals coupled with the difficulties associated with two step LPE growth would make g OMVPE a natural choice as a method of growth for the PBH structure and, in fact Nelson et al⁸ has reported an "all"-OMVPE grown PBH laser operating at 1.52 μm.

© 1986 Optical Society of America