Abstract

Multilayers alternating materials at atomic scale have been deposited, using UHV diode rf sputtering, to be used as soft X-ray mirrors [1,2,3,4]. We have investigated the relationship between the stack performances (reflectivity, selectivity) and the structural chara cteristics of the stacks. The use of graphite instead of amorphous carbon in Ni/C multilayers results in an increase of the performances as well as cooling the sample during the deposition. A similar effect is observed in W/BN multilayers introducing nitrogen during the growth to saturate the nitride. In the case of Si/SiN stacks, narrow Bragg peaks and a higher reflectivity are obtained anealing the samples up to 800°C. At least, a comparison is made between Mo/Si and Co/Si multilayers in order to show the importance of interface compound formation.

© 1992 Optical Society of America