Abstract

In any of the high-throughput lithography systems designed to operate at 0.25μm design rules and below, SXPL, X-ray 1:1, projection ion-beam or projection e-beam, there will be a significant amount of power flowing through the system. The effect of thermal loading must be included in the system design, for example, in the provision of heat sinks or the use of certain materials to reduce the effects of thermal expansion. In most cases distortions due to steady state heating can be compensated for or reduced to an acceptable level. However, in the case of a pulsed source, there are fundamental limits to the possible range of pulse power and duration that can be employed.

© 1993 Optical Society of America